SUM110N06-3M9H-E3 Datasheet
SUM110N06-3M9H-E3 Datasheet
Total Pages: 6
Size: 76.38 KB
Vishay Siliconix
This datasheet covers 1 part numbers:
SUM110N06-3M9H-E3
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Manufacturer Vishay Siliconix Series TrenchFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 110A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.9mOhm @ 30A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 15800pF @ 25V FET Feature - Power Dissipation (Max) 3.75W (Ta), 375W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 (D2Pak) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
