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FDS86267P

FDS86267P

For Reference Only

Part Number FDS86267P
PNEDA Part # FDS86267P
Description MOSFET P-CH 150V
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,290
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 2 - Apr 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDS86267P Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDS86267P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDS86267P, FDS86267P Datasheet (Total Pages: 7, Size: 399.53 KB)
PDFFDS86267P Datasheet Cover
FDS86267P Datasheet Page 2 FDS86267P Datasheet Page 3 FDS86267P Datasheet Page 4 FDS86267P Datasheet Page 5 FDS86267P Datasheet Page 6 FDS86267P Datasheet Page 7

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FDS86267P Specifications

ManufacturerON Semiconductor
SeriesPowerTrench®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25°C2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs255mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs16nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1130pF @ 75V
FET Feature-
Power Dissipation (Max)1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

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