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STQ2NK60ZR-AP

STQ2NK60ZR-AP

For Reference Only

Part Number STQ2NK60ZR-AP
PNEDA Part # STQ2NK60ZR-AP
Description MOSFET N-CH 600V 0.4A TO-92
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 22,704
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STQ2NK60ZR-AP Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTQ2NK60ZR-AP
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STQ2NK60ZR-AP, STQ2NK60ZR-AP Datasheet (Total Pages: 16, Size: 501.98 KB)
PDFSTP2NK60Z Datasheet Cover
STP2NK60Z Datasheet Page 2 STP2NK60Z Datasheet Page 3 STP2NK60Z Datasheet Page 4 STP2NK60Z Datasheet Page 5 STP2NK60Z Datasheet Page 6 STP2NK60Z Datasheet Page 7 STP2NK60Z Datasheet Page 8 STP2NK60Z Datasheet Page 9 STP2NK60Z Datasheet Page 10 STP2NK60Z Datasheet Page 11

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STQ2NK60ZR-AP Specifications

ManufacturerSTMicroelectronics
SeriesSuperMESH™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C400mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs8Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs10nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds170pF @ 25V
FET Feature-
Power Dissipation (Max)3W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-92-3
Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

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