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IRF1104STRR

IRF1104STRR

For Reference Only

Part Number IRF1104STRR
PNEDA Part # IRF1104STRR
Description MOSFET N-CH 40V 100A D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,596
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRF1104STRR Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRF1104STRR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRF1104STRR, IRF1104STRR Datasheet (Total Pages: 11, Size: 215.2 KB)
PDFIRF1104STRR Datasheet Cover
IRF1104STRR Datasheet Page 2 IRF1104STRR Datasheet Page 3 IRF1104STRR Datasheet Page 4 IRF1104STRR Datasheet Page 5 IRF1104STRR Datasheet Page 6 IRF1104STRR Datasheet Page 7 IRF1104STRR Datasheet Page 8 IRF1104STRR Datasheet Page 9 IRF1104STRR Datasheet Page 10 IRF1104STRR Datasheet Page 11

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IRF1104STRR Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs9mOhm @ 60A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs93nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2900pF @ 25V
FET Feature-
Power Dissipation (Max)2.4W (Ta), 170W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Gate Charge (Qg) (Max) @ Vgs

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Drive Voltage (Max Rds On, Min Rds On)

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