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STGW35HF60W

STGW35HF60W

For Reference Only

Part Number STGW35HF60W
PNEDA Part # STGW35HF60W
Description IGBT 600V 60A 200W TO247
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 6,288
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STGW35HF60W Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTGW35HF60W
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
STGW35HF60W, STGW35HF60W Datasheet (Total Pages: 17, Size: 633.46 KB)
PDFSTGFW35HF60W Datasheet Cover
STGFW35HF60W Datasheet Page 2 STGFW35HF60W Datasheet Page 3 STGFW35HF60W Datasheet Page 4 STGFW35HF60W Datasheet Page 5 STGFW35HF60W Datasheet Page 6 STGFW35HF60W Datasheet Page 7 STGFW35HF60W Datasheet Page 8 STGFW35HF60W Datasheet Page 9 STGFW35HF60W Datasheet Page 10 STGFW35HF60W Datasheet Page 11

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STGW35HF60W Specifications

ManufacturerSTMicroelectronics
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)60A
Current - Collector Pulsed (Icm)150A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 20A
Power - Max200W
Switching Energy290µJ (on), 185µJ (off)
Input TypeStandard
Gate Charge140nC
Td (on/off) @ 25°C30ns/175ns
Test Condition400V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247-3

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

180A

Vce(on) (Max) @ Vge, Ic

4.4V @ 15V, 30A

Power - Max

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Switching Energy

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Input Type

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Gate Charge

142nC

Td (on/off) @ 25°C

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Test Condition

600V, 30A, 3Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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ON Semiconductor

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Series

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IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

70A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

125nC

Td (on/off) @ 25°C

72ns/132ns

Test Condition

400V, 35A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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Microsemi

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Td (on/off) @ 25°C

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Test Condition

600V, 18A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

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IKD04N60R

Infineon Technologies

Manufacturer

Infineon Technologies

Series

TrenchStop®

IGBT Type

Trench

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

8A

Current - Collector Pulsed (Icm)

12A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 4A

Power - Max

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Switching Energy

240µJ

Input Type

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Gate Charge

27nC

Td (on/off) @ 25°C

14ns/146ns

Test Condition

400V, 4A, 43Ohm, 15V

Reverse Recovery Time (trr)

43ns

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

PG-TO252-3

APT35GN120L2DQ2G

Microsemi

Manufacturer

Microsemi Corporation

Series

-

IGBT Type

NPT, Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

94A

Current - Collector Pulsed (Icm)

105A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 35A

Power - Max

379W

Switching Energy

2.315mJ (off)

Input Type

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Gate Charge

220nC

Td (on/off) @ 25°C

24ns/300ns

Test Condition

800V, 35A, 2.2Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

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