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APT35GN120L2DQ2G

APT35GN120L2DQ2G

For Reference Only

Part Number APT35GN120L2DQ2G
PNEDA Part # APT35GN120L2DQ2G
Description IGBT 1200V 94A 379W TO264
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 8,784
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 4 - Apr 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

APT35GN120L2DQ2G Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberAPT35GN120L2DQ2G
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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APT35GN120L2DQ2G Specifications

ManufacturerMicrosemi Corporation
Series-
IGBT TypeNPT, Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)94A
Current - Collector Pulsed (Icm)105A
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 35A
Power - Max379W
Switching Energy2.315mJ (off)
Input TypeStandard
Gate Charge220nC
Td (on/off) @ 25°C24ns/300ns
Test Condition800V, 35A, 2.2Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-264-3, TO-264AA
Supplier Device Package-

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Input Type

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Td (on/off) @ 25°C

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Global Power Technologies Group

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

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Power - Max

480W

Switching Energy

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Input Type

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Gate Charge

480nC

Td (on/off) @ 25°C

55ns/200ns

Test Condition

600V, 40A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Infineon Technologies

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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STMicroelectronics

Manufacturer

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Series

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IGBT Type

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

28nC

Td (on/off) @ 25°C

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Test Condition

400V, 10A, 22Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

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Supplier Device Package

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IXDP20N60B

IXYS

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

70nC

Td (on/off) @ 25°C

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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