Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

STB13NM60N

STB13NM60N

For Reference Only

Part Number STB13NM60N
PNEDA Part # STB13NM60N
Description MOSFET N-CH 600V 11A D2PAK
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 3,114
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Feb 19 - Feb 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STB13NM60N Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTB13NM60N
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STB13NM60N, STB13NM60N Datasheet (Total Pages: 24, Size: 1,154.84 KB)
PDFSTB13NM60N Datasheet Cover
STB13NM60N Datasheet Page 2 STB13NM60N Datasheet Page 3 STB13NM60N Datasheet Page 4 STB13NM60N Datasheet Page 5 STB13NM60N Datasheet Page 6 STB13NM60N Datasheet Page 7 STB13NM60N Datasheet Page 8 STB13NM60N Datasheet Page 9 STB13NM60N Datasheet Page 10 STB13NM60N Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • STB13NM60N Datasheet
  • where to find STB13NM60N
  • STMicroelectronics

  • STMicroelectronics STB13NM60N
  • STB13NM60N PDF Datasheet
  • STB13NM60N Stock

  • STB13NM60N Pinout
  • Datasheet STB13NM60N
  • STB13NM60N Supplier

  • STMicroelectronics Distributor
  • STB13NM60N Price
  • STB13NM60N Distributor

STB13NM60N Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ II
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs360mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds790pF @ 50V
FET Feature-
Power Dissipation (Max)90W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

NILMS4501NR2G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

24V

Current - Continuous Drain (Id) @ 25°C

9.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

13mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

1500pF @ 6V

FET Feature

Current Sensing

Power Dissipation (Max)

1.4W (Ta)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

4-PLLP

Package / Case

4-PowerDFN

STF10NM60N

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ II

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

550mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

19nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

540pF @ 50V

FET Feature

-

Power Dissipation (Max)

25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FP

Package / Case

TO-220-3 Full Pack

SPB21N50C3ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

560V

Current - Continuous Drain (Id) @ 25°C

21A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

190mOhm @ 13.1A, 10V

Vgs(th) (Max) @ Id

3.9V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

95nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2400pF @ 25V

FET Feature

-

Power Dissipation (Max)

208W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO263-3-2

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STF10N95K5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH5™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

950V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

800mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

630pF @ 100V

FET Feature

-

Power Dissipation (Max)

30W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FP

Package / Case

TO-220-3 Full Pack

IXTV30N50P

IXYS

Manufacturer

IXYS

Series

PolarHV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

200mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

70nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

4150pF @ 25V

FET Feature

-

Power Dissipation (Max)

460W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS220

Package / Case

TO-220-3, Short Tab

Recently Sold

MC9S12C128CFUE

MC9S12C128CFUE

NXP

IC MCU 16BIT 128KB FLASH 80QFP

TAJE687K006RNJ

TAJE687K006RNJ

CAP TANT 680UF 10% 6.3V 2917

L7924CV

L7924CV

STMicroelectronics

IC REG LINEAR -24V 1.5A TO220AB

MMBT5551LT1G

MMBT5551LT1G

ON Semiconductor

TRANS NPN 160V 0.6A SOT23

NC7SB3157P6X

NC7SB3157P6X

ON Semiconductor

IC SWITCH SPDT SC70-6

IR2110PBF

IR2110PBF

Infineon Technologies

IC DRIVER HIGH/LOW SIDE 14DIP

TSV912IDT

TSV912IDT

STMicroelectronics

IC OPAMP GP 2 CIRCUIT 8SO

PZTA06

PZTA06

ON Semiconductor

TRANS NPN 80V 0.5A SOT-223

DSC6001CI2A-016.0000

DSC6001CI2A-016.0000

Microchip Technology

MEMS OSC XO 16.0000MHZ CMOS SMD

PCA8574AD,518

PCA8574AD,518

NXP

IC I/O EXPANDER I2C 8B 16SOIC

SP3304NUTG

SP3304NUTG

Littelfuse

TVS DIODE 3.3V 11.5V 10UDFN

ADG3308BRUZ

ADG3308BRUZ

Analog Devices

IC TRNSLTR BIDIRECTIONAL 20TSSOP