Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXFK180N07

IXFK180N07

For Reference Only

Part Number IXFK180N07
PNEDA Part # IXFK180N07
Description MOSFET N-CH 70V 180A TO-264AA
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,748
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFK180N07 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFK180N07
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFK180N07, IXFK180N07 Datasheet (Total Pages: 5, Size: 133.29 KB)
PDFIXFK180N07 Datasheet Cover
IXFK180N07 Datasheet Page 2 IXFK180N07 Datasheet Page 3 IXFK180N07 Datasheet Page 4 IXFK180N07 Datasheet Page 5

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXFK180N07 Datasheet
  • where to find IXFK180N07
  • IXYS

  • IXYS IXFK180N07
  • IXFK180N07 PDF Datasheet
  • IXFK180N07 Stock

  • IXFK180N07 Pinout
  • Datasheet IXFK180N07
  • IXFK180N07 Supplier

  • IXYS Distributor
  • IXFK180N07 Price
  • IXFK180N07 Distributor

IXFK180N07 Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)70V
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id4V @ 8mA
Gate Charge (Qg) (Max) @ Vgs420nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds9400pF @ 25V
FET Feature-
Power Dissipation (Max)568W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-264AA (IXFK)
Package / CaseTO-264-3, TO-264AA

The Products You May Be Interested In

TPH3205WSBQA

Transphorm

Manufacturer

Transphorm

Series

Automotive, AEC-Q101

FET Type

N-Channel

Technology

GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

62mOhm @ 22A, 8V

Vgs(th) (Max) @ Id

2.6V @ 700µA

Gate Charge (Qg) (Max) @ Vgs

42nC @ 8V

Vgs (Max)

±18V

Input Capacitance (Ciss) (Max) @ Vds

2200pF @ 400V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

IRF7805ZTRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

16A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6.8mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

27nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2080pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

8mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 5V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

4633pF @ 25V

FET Feature

-

Power Dissipation (Max)

211W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

TPCP8J01(TE85L,F,M

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

32V

Current - Continuous Drain (Id) @ 25°C

5.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

35mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

34nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1760pF @ 10V

FET Feature

-

Power Dissipation (Max)

2.14W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PS-8

Package / Case

8-SMD, Flat Lead

NDB7060

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

13mOhm @ 40A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

115nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3600pF @ 25V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-65°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

PME271Y447MR30

PME271Y447MR30

KEMET

CAP FILM 4700PF 20% 1KVDC RADIAL

SMBJ12CA-TR

SMBJ12CA-TR

STMicroelectronics

TVS DIODE 12V 25.3V SMB

IR2110STRPBF

IR2110STRPBF

Infineon Technologies

IC DRIVER HIGH/LOW SIDE 16SOIC

NC7WZ00K8X

NC7WZ00K8X

ON Semiconductor

IC GATE NAND 2CH 2-INP US8

AC0603FR-07100KL

AC0603FR-07100KL

Yageo

RES SMD 100K OHM 1% 1/10W 0603

1N5614

1N5614

Semtech

DIODE GEN PURP 200V 2A AXIAL

ADAU1761BCPZ

ADAU1761BCPZ

Analog Devices

IC SIGMADSP CODEC PLL 32LFCSP

PIC16F18323-I/SL

PIC16F18323-I/SL

Microchip Technology

IC MCU 8BIT 3.5KB FLASH 14SOIC

CDSOT23-SM712

CDSOT23-SM712

Bourns

TVS DIODE 7V/12V 14V/26V SOT23-3

0458002.DR

0458002.DR

Littelfuse

FUSE BRD MNT 2A 48VAC 75VDC 1206

DSC6001CI2A-016.0000

DSC6001CI2A-016.0000

Microchip Technology

MEMS OSC XO 16.0000MHZ CMOS SMD

PIC12F629-I/SN

PIC12F629-I/SN

Microchip Technology

IC MCU 8BIT 1.75KB FLASH 8SOIC