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IXTY1R4N60P

IXTY1R4N60P

For Reference Only

Part Number IXTY1R4N60P
PNEDA Part # IXTY1R4N60P
Description MOSFET N-CH 600V 1.4A D-PAK
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,526
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTY1R4N60P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTY1R4N60P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTY1R4N60P, IXTY1R4N60P Datasheet (Total Pages: 4, Size: 152.02 KB)
PDFIXTU1R4N60P Datasheet Cover
IXTU1R4N60P Datasheet Page 2 IXTU1R4N60P Datasheet Page 3 IXTU1R4N60P Datasheet Page 4

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IXTY1R4N60P Specifications

ManufacturerIXYS
SeriesPolarHV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs9Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id5.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs5.2nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds140pF @ 25V
FET Feature-
Power Dissipation (Max)50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252, (D-Pak)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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