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SQS405ENW-T1_GE3

SQS405ENW-T1_GE3

For Reference Only

Part Number SQS405ENW-T1_GE3
PNEDA Part # SQS405ENW-T1_GE3
Description MOSFET P-CH 12V 16A POWERPAK1212
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 28,782
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQS405ENW-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQS405ENW-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQS405ENW-T1_GE3, SQS405ENW-T1_GE3 Datasheet (Total Pages: 9, Size: 236.45 KB)
PDFSQS405ENW-T1_GE3 Datasheet Cover
SQS405ENW-T1_GE3 Datasheet Page 2 SQS405ENW-T1_GE3 Datasheet Page 3 SQS405ENW-T1_GE3 Datasheet Page 4 SQS405ENW-T1_GE3 Datasheet Page 5 SQS405ENW-T1_GE3 Datasheet Page 6 SQS405ENW-T1_GE3 Datasheet Page 7 SQS405ENW-T1_GE3 Datasheet Page 8 SQS405ENW-T1_GE3 Datasheet Page 9

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SQS405ENW-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesAutomotive, AEC-Q101, TrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs20mOhm @ 13.5A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs75nC @ 8V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds2650pF @ 6V
FET Feature-
Power Dissipation (Max)39W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package / CasePowerPAK® 1212-8

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