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FQI9N08LTU

FQI9N08LTU

For Reference Only

Part Number FQI9N08LTU
PNEDA Part # FQI9N08LTU
Description MOSFET N-CH 80V 9.3A I2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,660
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQI9N08LTU Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQI9N08LTU
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQI9N08LTU, FQI9N08LTU Datasheet (Total Pages: 9, Size: 612.28 KB)
PDFFQI9N08LTU Datasheet Cover
FQI9N08LTU Datasheet Page 2 FQI9N08LTU Datasheet Page 3 FQI9N08LTU Datasheet Page 4 FQI9N08LTU Datasheet Page 5 FQI9N08LTU Datasheet Page 6 FQI9N08LTU Datasheet Page 7 FQI9N08LTU Datasheet Page 8 FQI9N08LTU Datasheet Page 9

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FQI9N08LTU Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C9.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs210mOhm @ 4.65A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.1nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds280pF @ 25V
FET Feature-
Power Dissipation (Max)3.75W (Ta), 40W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK (TO-262)
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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