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SIR184DP-T1-RE3

SIR184DP-T1-RE3

For Reference Only

Part Number SIR184DP-T1-RE3
PNEDA Part # SIR184DP-T1-RE3
Description MOSFET N-CHAN 60V POWERPAK SO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,812
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIR184DP-T1-RE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIR184DP-T1-RE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIR184DP-T1-RE3, SIR184DP-T1-RE3 Datasheet (Total Pages: 13, Size: 380.5 KB)
PDFSIR184DP-T1-RE3 Datasheet Cover
SIR184DP-T1-RE3 Datasheet Page 2 SIR184DP-T1-RE3 Datasheet Page 3 SIR184DP-T1-RE3 Datasheet Page 4 SIR184DP-T1-RE3 Datasheet Page 5 SIR184DP-T1-RE3 Datasheet Page 6 SIR184DP-T1-RE3 Datasheet Page 7 SIR184DP-T1-RE3 Datasheet Page 8 SIR184DP-T1-RE3 Datasheet Page 9 SIR184DP-T1-RE3 Datasheet Page 10 SIR184DP-T1-RE3 Datasheet Page 11

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SIR184DP-T1-RE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET® Gen IV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C20.7A (Ta), 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs5.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs32nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1490pF @ 30V
FET Feature-
Power Dissipation (Max)5W (Ta), 62.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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