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SQ3418AEEV-T1_GE3

SQ3418AEEV-T1_GE3

For Reference Only

Part Number SQ3418AEEV-T1_GE3
PNEDA Part # SQ3418AEEV-T1_GE3
Description MOSFET N-CHANNEL 30V 7.8A 6TSOP
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 7,038
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SQ3418AEEV-T1_GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSQ3418AEEV-T1_GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SQ3418AEEV-T1_GE3, SQ3418AEEV-T1_GE3 Datasheet (Total Pages: 2, Size: 84.87 KB)
PDFSQ3418AEEV-T1_GE3 Datasheet Cover
SQ3418AEEV-T1_GE3 Datasheet Page 2

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SQ3418AEEV-T1_GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C7.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs35mOhm @ 6A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds370pF @ 15V
FET Feature-
Power Dissipation (Max)4W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-TSOP
Package / CaseSOT-23-6 Thin, TSOT-23-6

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