Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPT60R028G7XTMA1

IPT60R028G7XTMA1

For Reference Only

Part Number IPT60R028G7XTMA1
PNEDA Part # IPT60R028G7XTMA1
Description MOSFET N-CH 600V 75A HSOF-8
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 6,426
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPT60R028G7XTMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPT60R028G7XTMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPT60R028G7XTMA1 Datasheet
  • where to find IPT60R028G7XTMA1
  • Infineon Technologies

  • Infineon Technologies IPT60R028G7XTMA1
  • IPT60R028G7XTMA1 PDF Datasheet
  • IPT60R028G7XTMA1 Stock

  • IPT60R028G7XTMA1 Pinout
  • Datasheet IPT60R028G7XTMA1
  • IPT60R028G7XTMA1 Supplier

  • Infineon Technologies Distributor
  • IPT60R028G7XTMA1 Price
  • IPT60R028G7XTMA1 Distributor

IPT60R028G7XTMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ G7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs28mOhm @ 28.8A, 10V
Vgs(th) (Max) @ Id4V @ 1.44mA
Gate Charge (Qg) (Max) @ Vgs123nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4820pF @ 400V
FET Feature-
Power Dissipation (Max)391W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-HSOF-8-2
Package / Case8-PowerSFN

The Products You May Be Interested In

STD7N90K5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ K5

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

110W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

94-4762

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

27A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

45mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

34nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

700pF @ 25V

FET Feature

-

Power Dissipation (Max)

68W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

SIJ438ADP-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET® Gen IV

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

45.3A (Ta), 169A(Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.35mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

162nC @ 10V

Vgs (Max)

+20V, -16V

Input Capacitance (Ciss) (Max) @ Vds

7800pF @ 20V

FET Feature

-

Power Dissipation (Max)

5W (Ta), 69.4W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PowerPAK® SO-8

Package / Case

PowerPAK® SO-8

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

30.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

30mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

26.6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1800pF @ 20V

FET Feature

-

Power Dissipation (Max)

62.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-HVSON (6x5)

Package / Case

8-VDFN Exposed Pad

IPP65R095C7XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ C7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

24A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

95mOhm @ 11.8A, 10V

Vgs(th) (Max) @ Id

4V @ 590µA

Gate Charge (Qg) (Max) @ Vgs

45nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2140pF @ 400V

FET Feature

-

Power Dissipation (Max)

128W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3

Package / Case

TO-220-3

Recently Sold

S29GL256P11FFIV10

S29GL256P11FFIV10

Cypress Semiconductor

IC FLASH 256M PARALLEL 64FBGA

AD823AR

AD823AR

Analog Devices

IC OPAMP JFET 2 CIRCUIT 8SOIC

SMBJ7.0CA-E3/52

SMBJ7.0CA-E3/52

Vishay Semiconductor Diodes Division

TVS DIODE 7V 12V DO214AA

1N5819HW-7-F

1N5819HW-7-F

Diodes Incorporated

DIODE SCHOTTKY 40V 1A SOD123

IHLP2525CZER1R0M01

IHLP2525CZER1R0M01

Vishay Dale

FIXED IND 1UH 11A 10 MOHM SMD

BNX026H01L

BNX026H01L

Murata

FILTER LC 10UF SMD

IHLP2525CZERR33M01

IHLP2525CZERR33M01

Vishay Dale

FIXED IND 330NH 20A 3.9 MOHM SMD

TX1475NL

TX1475NL

Pulse Electronics Network

XFRMR OCTAL 1:2/1:1 1.2MH SMD

PC357N4J000F

PC357N4J000F

SHARP/Socle Technology

OPTOISO 3.75KV TRANS 4-MINI-FLAT

STPS0560Z

STPS0560Z

STMicroelectronics

DIODE SCHOTTKY 60V 500MA SOD123

2843010402

2843010402

Fair-Rite Products

FERRITE CORE MULTI-APERTURE

HCPL-060L-000E

HCPL-060L-000E

Broadcom

OPTOISO 3.75KV OPN COLLECTOR 8SO