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SPP02N60C3HKSA1

SPP02N60C3HKSA1

For Reference Only

Part Number SPP02N60C3HKSA1
PNEDA Part # SPP02N60C3HKSA1
Description MOSFET N-CH 650V 1.8A TO-220AB
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,994
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SPP02N60C3HKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberSPP02N60C3HKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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SPP02N60C3HKSA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id3.9V @ 80µA
Gate Charge (Qg) (Max) @ Vgs12.5nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds200pF @ 25V
FET Feature-
Power Dissipation (Max)25W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-1
Package / CaseTO-220-3

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