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NVMFD6H852NLT1G

NVMFD6H852NLT1G

For Reference Only

Part Number NVMFD6H852NLT1G
PNEDA Part # NVMFD6H852NLT1G
Description FET NCH 80V
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,642
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NVMFD6H852NLT1G Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNVMFD6H852NLT1G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NVMFD6H852NLT1G, NVMFD6H852NLT1G Datasheet (Total Pages: 6, Size: 126.63 KB)
PDFNVMFD6H852NLWFT1G Datasheet Cover
NVMFD6H852NLWFT1G Datasheet Page 2 NVMFD6H852NLWFT1G Datasheet Page 3 NVMFD6H852NLWFT1G Datasheet Page 4 NVMFD6H852NLWFT1G Datasheet Page 5 NVMFD6H852NLWFT1G Datasheet Page 6

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NVMFD6H852NLT1G Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C7A (Ta), 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs25.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2V @ 26µA
Gate Charge (Qg) (Max) @ Vgs10nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds521pF @ 40V
FET Feature-
Power Dissipation (Max)3.2W (Ta), 38W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-DFN (5x6) Dual Flag (SO8FL-Dual)
Package / Case8-PowerTDFN

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