Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SIHG47N65E-GE3

SIHG47N65E-GE3

For Reference Only

Part Number SIHG47N65E-GE3
PNEDA Part # SIHG47N65E-GE3
Description MOSFET N-CH 650V 47A TO-247AC
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 11,376
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIHG47N65E-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIHG47N65E-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIHG47N65E-GE3, SIHG47N65E-GE3 Datasheet (Total Pages: 7, Size: 152.54 KB)
PDFSIHG47N65E-GE3 Datasheet Cover
SIHG47N65E-GE3 Datasheet Page 2 SIHG47N65E-GE3 Datasheet Page 3 SIHG47N65E-GE3 Datasheet Page 4 SIHG47N65E-GE3 Datasheet Page 5 SIHG47N65E-GE3 Datasheet Page 6 SIHG47N65E-GE3 Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SIHG47N65E-GE3 Datasheet
  • where to find SIHG47N65E-GE3
  • Vishay Siliconix

  • Vishay Siliconix SIHG47N65E-GE3
  • SIHG47N65E-GE3 PDF Datasheet
  • SIHG47N65E-GE3 Stock

  • SIHG47N65E-GE3 Pinout
  • Datasheet SIHG47N65E-GE3
  • SIHG47N65E-GE3 Supplier

  • Vishay Siliconix Distributor
  • SIHG47N65E-GE3 Price
  • SIHG47N65E-GE3 Distributor

SIHG47N65E-GE3 Specifications

ManufacturerVishay Siliconix
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs72mOhm @ 24A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs273nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds5682pF @ 100V
FET Feature-
Power Dissipation (Max)417W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AC
Package / CaseTO-247-3

The Products You May Be Interested In

TSM2302CX RFG

Taiwan Semiconductor Corporation

Manufacturer

Taiwan Semiconductor Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

3.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

65mOhm @ 3.2A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.8nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

587pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.5W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3

SIHG70N60AEF-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

EF

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

41mOhm @ 35A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

410nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5348pF @ 100V

FET Feature

-

Power Dissipation (Max)

417W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AC

Package / Case

TO-247-3

IXTP38N15T

IXYS

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

38A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

IPB067N08N3GATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

6.7mOhm @ 73A, 10V

Vgs(th) (Max) @ Id

3.5V @ 73µA

Gate Charge (Qg) (Max) @ Vgs

56nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3840pF @ 40V

FET Feature

-

Power Dissipation (Max)

136W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRFC4668EF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

Recently Sold

MAX13035EETE+

MAX13035EETE+

Maxim Integrated

IC TRNSLTR BIDIRECTIONAL 16TQFN

3224W-1-101E

3224W-1-101E

Bourns

TRIMMER 100 OHM 0.25W J LEAD TOP

HCPL-0631-500E

HCPL-0631-500E

Broadcom

OPTOISO 3.75KV 2CH OPEN COLL 8SO

LM348DT

LM348DT

STMicroelectronics

IC OPAMP GP 4 CIRCUIT 14SO

ZVP4424GTA

ZVP4424GTA

Diodes Incorporated

MOSFET P-CH 240V 0.48A SOT223

BNX026H01L

BNX026H01L

Murata

FILTER LC 10UF SMD

LC4256V-75T176C

LC4256V-75T176C

Lattice Semiconductor Corporation

IC CPLD 256MC 7.5NS 176TQFP

LE75181BBSC

LE75181BBSC

Microchip Technology

IC LINE CARD LCAS 1CH 16SOIC

MF-R050

MF-R050

Bourns

PTC RESET FUSE 60V 500MA RADIAL

LTC2855IDE

LTC2855IDE

Linear Technology/Analog Devices

IC TRANSCEIVER FULL 1/1 12DFN

MC9RS08KA2CSC

MC9RS08KA2CSC

NXP

IC MCU 8BIT 2KB FLASH 8SOIC

DS2438Z+

DS2438Z+

Maxim Integrated

IC MONITOR SMART BATTERY 8-SOIC