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IPB067N08N3GATMA1

IPB067N08N3GATMA1

For Reference Only

Part Number IPB067N08N3GATMA1
PNEDA Part # IPB067N08N3GATMA1
Description MOSFET N-CH 80V 80A TO263-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 35,184
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPB067N08N3GATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPB067N08N3GATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPB067N08N3GATMA1, IPB067N08N3GATMA1 Datasheet (Total Pages: 11, Size: 1,021.99 KB)
PDFIPP070N08N3 G Datasheet Cover
IPP070N08N3 G Datasheet Page 2 IPP070N08N3 G Datasheet Page 3 IPP070N08N3 G Datasheet Page 4 IPP070N08N3 G Datasheet Page 5 IPP070N08N3 G Datasheet Page 6 IPP070N08N3 G Datasheet Page 7 IPP070N08N3 G Datasheet Page 8 IPP070N08N3 G Datasheet Page 9 IPP070N08N3 G Datasheet Page 10 IPP070N08N3 G Datasheet Page 11

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IPB067N08N3GATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs6.7mOhm @ 73A, 10V
Vgs(th) (Max) @ Id3.5V @ 73µA
Gate Charge (Qg) (Max) @ Vgs56nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3840pF @ 40V
FET Feature-
Power Dissipation (Max)136W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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