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SIA817EDJ-T1-GE3

SIA817EDJ-T1-GE3

For Reference Only

Part Number SIA817EDJ-T1-GE3
PNEDA Part # SIA817EDJ-T1-GE3
Description MOSFET P-CH 30V 4.5A SC-70-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 317,052
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIA817EDJ-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIA817EDJ-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIA817EDJ-T1-GE3, SIA817EDJ-T1-GE3 Datasheet (Total Pages: 11, Size: 324.31 KB)
PDFSIA817EDJ-T1-GE3 Datasheet Cover
SIA817EDJ-T1-GE3 Datasheet Page 2 SIA817EDJ-T1-GE3 Datasheet Page 3 SIA817EDJ-T1-GE3 Datasheet Page 4 SIA817EDJ-T1-GE3 Datasheet Page 5 SIA817EDJ-T1-GE3 Datasheet Page 6 SIA817EDJ-T1-GE3 Datasheet Page 7 SIA817EDJ-T1-GE3 Datasheet Page 8 SIA817EDJ-T1-GE3 Datasheet Page 9 SIA817EDJ-T1-GE3 Datasheet Page 10 SIA817EDJ-T1-GE3 Datasheet Page 11

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SIA817EDJ-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesLITTLE FOOT®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Rds On (Max) @ Id, Vgs65mOhm @ 3A, 10V
Vgs(th) (Max) @ Id1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds600pF @ 15V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)1.9W (Ta), 6.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-70-6 Dual
Package / CasePowerPAK® SC-70-6 Dual

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