Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SIA817EDJ-T1-GE3

SIA817EDJ-T1-GE3

For Reference Only

Part Number SIA817EDJ-T1-GE3
PNEDA Part # SIA817EDJ-T1-GE3
Description MOSFET P-CH 30V 4.5A SC-70-6
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 317,052
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIA817EDJ-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIA817EDJ-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SIA817EDJ-T1-GE3, SIA817EDJ-T1-GE3 Datasheet (Total Pages: 11, Size: 324.31 KB)
PDFSIA817EDJ-T1-GE3 Datasheet Cover
SIA817EDJ-T1-GE3 Datasheet Page 2 SIA817EDJ-T1-GE3 Datasheet Page 3 SIA817EDJ-T1-GE3 Datasheet Page 4 SIA817EDJ-T1-GE3 Datasheet Page 5 SIA817EDJ-T1-GE3 Datasheet Page 6 SIA817EDJ-T1-GE3 Datasheet Page 7 SIA817EDJ-T1-GE3 Datasheet Page 8 SIA817EDJ-T1-GE3 Datasheet Page 9 SIA817EDJ-T1-GE3 Datasheet Page 10 SIA817EDJ-T1-GE3 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SIA817EDJ-T1-GE3 Datasheet
  • where to find SIA817EDJ-T1-GE3
  • Vishay Siliconix

  • Vishay Siliconix SIA817EDJ-T1-GE3
  • SIA817EDJ-T1-GE3 PDF Datasheet
  • SIA817EDJ-T1-GE3 Stock

  • SIA817EDJ-T1-GE3 Pinout
  • Datasheet SIA817EDJ-T1-GE3
  • SIA817EDJ-T1-GE3 Supplier

  • Vishay Siliconix Distributor
  • SIA817EDJ-T1-GE3 Price
  • SIA817EDJ-T1-GE3 Distributor

SIA817EDJ-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesLITTLE FOOT®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Rds On (Max) @ Id, Vgs65mOhm @ 3A, 10V
Vgs(th) (Max) @ Id1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds600pF @ 15V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)1.9W (Ta), 6.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-70-6 Dual
Package / CasePowerPAK® SC-70-6 Dual

The Products You May Be Interested In

Manufacturer

IXYS

Series

TrenchT2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2690pF @ 25V

FET Feature

-

Power Dissipation (Max)

150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

STW15N95K5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

SuperMESH5™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

950V

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

500mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

40nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

900pF @ 100V

FET Feature

-

Power Dissipation (Max)

170W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247

Package / Case

TO-247-3

IPA65R150CFDXKSA2

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ CFD2

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

22.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

150mOhm @ 9.3A, 10V

Vgs(th) (Max) @ Id

4.5V @ 900µA

Gate Charge (Qg) (Max) @ Vgs

86nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2340pF @ 100V

FET Feature

-

Power Dissipation (Max)

34.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220 Full Pack

Package / Case

TO-220-3 Full Pack

SPA15N60C3XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

15A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

280mOhm @ 9.4A, 10V

Vgs(th) (Max) @ Id

3.9V @ 675µA

Gate Charge (Qg) (Max) @ Vgs

63nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1660pF @ 25V

FET Feature

-

Power Dissipation (Max)

34W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-FP

Package / Case

TO-220-3 Full Pack

IPD80R900P7ATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ P7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

900mOhm @ 2.2A, 10V

Vgs(th) (Max) @ Id

3.5V @ 110µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 500V

FET Feature

-

Power Dissipation (Max)

45W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Recently Sold

NC7WZ17P6X

NC7WZ17P6X

ON Semiconductor

IC BUF NON-INVERT 5.5V SC70-6

HD64F3664FPV

HD64F3664FPV

Renesas Electronics America

IC MCU 16BIT 32KB FLASH 64LQFP

MBRD1035CTLG

MBRD1035CTLG

ON Semiconductor

DIODE ARRAY SCHOTTKY 35V 5A DPAK

LM348DT

LM348DT

STMicroelectronics

IC OPAMP GP 4 CIRCUIT 14SO

NFM41PC155B1H3L

NFM41PC155B1H3L

Murata

CAP FEEDTHRU 1.5UF 20% 50V 1806

GD25Q80CSIG

GD25Q80CSIG

GigaDevice Semiconductor (HK) Limited

NOR FLASH

BYW80-200G

BYW80-200G

ON Semiconductor

DIODE GEN PURP 200V 8A TO220-2

IHLP2525CZER1R0M01

IHLP2525CZER1R0M01

Vishay Dale

FIXED IND 1UH 11A 10 MOHM SMD

DG641DY

DG641DY

Vishay Siliconix

IC VIDEO SWITCH SPST 16SOIC

2843010402

2843010402

Fair-Rite Products

FERRITE CORE MULTI-APERTURE

IRF9310TRPBF

IRF9310TRPBF

Infineon Technologies

MOSFET P-CH 30V 20A 8-SOIC

DS5000-32-16+

DS5000-32-16+

Maxim Integrated

IC MCU 8BIT 32KB NVSRAM 40EDIP