SPD03N50C3ATMA1
For Reference Only
| Part Number | SPD03N50C3ATMA1 |
| PNEDA Part # | SPD03N50C3ATMA1 |
| Description | MOSFET N-CH 500V 3.2A DPAK |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 8,532 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 30 - Apr 4 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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SPD03N50C3ATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | SPD03N50C3ATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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SPD03N50C3ATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 135µA |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3-1 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Manufacturer IXYS Series HiPerFET™, TrenchT2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 150A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 15mOhm @ 75A, 10V Vgs(th) (Max) @ Id 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 177nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 11700pF @ 25V FET Feature - Power Dissipation (Max) 890W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-268 Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Manufacturer Panasonic Electronic Components Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 1.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 153mOhm @ 700mA, 4.5V Vgs(th) (Max) @ Id 1V @ 598µA Gate Charge (Qg) (Max) @ Vgs 3.3nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 226pF @ 10V FET Feature - Power Dissipation (Max) 340mW (Ta) Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Supplier Device Package ALGA004-W-0606-RA01 Package / Case 4-XFLGA, CSP |
Manufacturer Nexperia USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3mOhm @ 25A, 10V Vgs(th) (Max) @ Id 2.15V @ 1mA Gate Charge (Qg) (Max) @ Vgs 66nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3954pF @ 15V FET Feature - Power Dissipation (Max) 170W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
