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IPD80R900P7ATMA1

IPD80R900P7ATMA1

For Reference Only

Part Number IPD80R900P7ATMA1
PNEDA Part # IPD80R900P7ATMA1
Description MOSFET N-CH 800V 6A TO252-3
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,400
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 20 - Mar 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD80R900P7ATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD80R900P7ATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPD80R900P7ATMA1, IPD80R900P7ATMA1 Datasheet (Total Pages: 13, Size: 961.54 KB)
PDFIPD80R900P7ATMA1 Datasheet Cover
IPD80R900P7ATMA1 Datasheet Page 2 IPD80R900P7ATMA1 Datasheet Page 3 IPD80R900P7ATMA1 Datasheet Page 4 IPD80R900P7ATMA1 Datasheet Page 5 IPD80R900P7ATMA1 Datasheet Page 6 IPD80R900P7ATMA1 Datasheet Page 7 IPD80R900P7ATMA1 Datasheet Page 8 IPD80R900P7ATMA1 Datasheet Page 9 IPD80R900P7ATMA1 Datasheet Page 10 IPD80R900P7ATMA1 Datasheet Page 11

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IPD80R900P7ATMA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™ P7
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs900mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id3.5V @ 110µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds350pF @ 500V
FET Feature-
Power Dissipation (Max)45W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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