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SI2369DS-T1-GE3

SI2369DS-T1-GE3

For Reference Only

Part Number SI2369DS-T1-GE3
PNEDA Part # SI2369DS-T1-GE3
Description MOSFET P-CH 30V 7.6A TO-236
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 1,290,276
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 18 - Mar 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI2369DS-T1-GE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI2369DS-T1-GE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI2369DS-T1-GE3, SI2369DS-T1-GE3 Datasheet (Total Pages: 10, Size: 237.65 KB)
PDFSI2369DS-T1-GE3 Datasheet Cover
SI2369DS-T1-GE3 Datasheet Page 2 SI2369DS-T1-GE3 Datasheet Page 3 SI2369DS-T1-GE3 Datasheet Page 4 SI2369DS-T1-GE3 Datasheet Page 5 SI2369DS-T1-GE3 Datasheet Page 6 SI2369DS-T1-GE3 Datasheet Page 7 SI2369DS-T1-GE3 Datasheet Page 8 SI2369DS-T1-GE3 Datasheet Page 9 SI2369DS-T1-GE3 Datasheet Page 10

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SI2369DS-T1-GE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs29mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs36nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1295pF @ 15V
FET Feature-
Power Dissipation (Max)1.25W (Ta), 2.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-236
Package / CaseTO-236-3, SC-59, SOT-23-3

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