Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

2N7002-7-F

2N7002-7-F 2N7002-7-F

For Reference Only

Part Number 2N7002-7-F
PNEDA Part # 2N7002-7-F
Description MOSFET N-CH 60V 115MA SOT23-3
Manufacturer Diodes Incorporated
Unit Price Request a Quote
In Stock 37,169,532
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

2N7002-7-F Resources

Brand Diodes Incorporated
ECAD Module ECAD
Mfr. Part Number2N7002-7-F
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
2N7002-7-F, 2N7002-7-F Datasheet (Total Pages: 5, Size: 112.86 KB)
PDF2N7002-7 Datasheet Cover
2N7002-7 Datasheet Page 2 2N7002-7 Datasheet Page 3 2N7002-7 Datasheet Page 4 2N7002-7 Datasheet Page 5

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • 2N7002-7-F Datasheet
  • where to find 2N7002-7-F
  • Diodes Incorporated

  • Diodes Incorporated 2N7002-7-F
  • 2N7002-7-F PDF Datasheet
  • 2N7002-7-F Stock

  • 2N7002-7-F Pinout
  • Datasheet 2N7002-7-F
  • 2N7002-7-F Supplier

  • Diodes Incorporated Distributor
  • 2N7002-7-F Price
  • 2N7002-7-F Distributor

2N7002-7-F Specifications

ManufacturerDiodes Incorporated
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds50pF @ 25V
FET Feature-
Power Dissipation (Max)370mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3
Package / CaseTO-236-3, SC-59, SOT-23-3

The Products You May Be Interested In

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

102A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

18mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

87nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5220pF @ 25V

FET Feature

-

Power Dissipation (Max)

455W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

SPD04P10PLGBTMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

4.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

850mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

2V @ 380µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

372pF @ 25V

FET Feature

-

Power Dissipation (Max)

38W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRFH8303TRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®, StrongIRFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

43A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.1mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

2.2V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

179nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7736pF @ 24V

FET Feature

-

Power Dissipation (Max)

3.7W (Ta), 156W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PQFN (5x6)

Package / Case

8-PowerTDFN

STF7LN80K5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.15Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

270pF @ 100V

FET Feature

-

Power Dissipation (Max)

25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FP

Package / Case

TO-220-3 Full Pack

Manufacturer

IXYS

Series

TrenchHV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

175V

Current - Continuous Drain (Id) @ 25°C

150A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

12mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

155nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

9800pF @ 25V

FET Feature

-

Power Dissipation (Max)

830W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXTH)

Package / Case

TO-247-3

Recently Sold

HCPL-060L-000E

HCPL-060L-000E

Broadcom

OPTOISO 3.75KV OPN COLLECTOR 8SO

TIP42CTU

TIP42CTU

ON Semiconductor

TRANS PNP 100V 6A TO-220

BZT52C3V9-7-F

BZT52C3V9-7-F

Diodes Incorporated

DIODE ZENER 3.9V 500MW SOD123

L7815CV-DG

L7815CV-DG

STMicroelectronics

IC REG LINEAR 15V 1.5A TO220

BNX022-01L

BNX022-01L

Murata

FILTER LC 1UF SMD

LTST-S310F2KT

LTST-S310F2KT

Lite-On Inc.

LED RGB CLEAR SMD R/A

AD8421ARMZ-R7

AD8421ARMZ-R7

Analog Devices

IC INST AMP 1 CIRCUIT 8MSOP

ATMEGA162-16PU

ATMEGA162-16PU

Microchip Technology

IC MCU 8BIT 16KB FLASH 40DIP

NC7SZ00P5X

NC7SZ00P5X

ON Semiconductor

IC GATE NAND 1CH 2-INP SC70-5

LTM8074IY#PBF

LTM8074IY#PBF

Linear Technology/Analog Devices

IC REG BUCK ADJ 1.2A 25BGA

ADG201AKNZ

ADG201AKNZ

Analog Devices

IC SWITCH QUAD SPST 16DIP

VUB72-12NOXT

VUB72-12NOXT

IXYS

BRIDGE RECT 3P 1.2KV 75A V1A-PAK