SI2302DS,215
For Reference Only
| Part Number | SI2302DS,215 |
| PNEDA Part # | SI2302DS-215 |
| Description | MOSFET N-CH 20V 2.5A SOT23 |
| Manufacturer | NXP |
| Unit Price | Request a Quote |
| In Stock | 3,526 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Nov 27 - Dec 2 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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SI2302DS Resources
| Brand | NXP |
| ECAD Module |
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| Mfr. Part Number | SI2302DS,215 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
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SI2302DS Specifications
| Manufacturer | NXP USA Inc. |
| Series | TrenchMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 3.6A, 4.5V |
| Vgs(th) (Max) @ Id | 650mV @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 230pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 830mW (Tc) |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-236AB (SOT23) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
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