Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

FDB3632-F085

FDB3632-F085

For Reference Only

Part Number FDB3632-F085
PNEDA Part # FDB3632-F085
Description MOSFET N-CH 100V 12A D2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 3,454
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FDB3632-F085 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFDB3632-F085
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FDB3632-F085, FDB3632-F085 Datasheet (Total Pages: 11, Size: 1,731.74 KB)
PDFFDB3632-F085 Datasheet Cover
FDB3632-F085 Datasheet Page 2 FDB3632-F085 Datasheet Page 3 FDB3632-F085 Datasheet Page 4 FDB3632-F085 Datasheet Page 5 FDB3632-F085 Datasheet Page 6 FDB3632-F085 Datasheet Page 7 FDB3632-F085 Datasheet Page 8 FDB3632-F085 Datasheet Page 9 FDB3632-F085 Datasheet Page 10 FDB3632-F085 Datasheet Page 11

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • FDB3632-F085 Datasheet
  • where to find FDB3632-F085
  • ON Semiconductor

  • ON Semiconductor FDB3632-F085
  • FDB3632-F085 PDF Datasheet
  • FDB3632-F085 Stock

  • FDB3632-F085 Pinout
  • Datasheet FDB3632-F085
  • FDB3632-F085 Supplier

  • ON Semiconductor Distributor
  • FDB3632-F085 Price
  • FDB3632-F085 Distributor

FDB3632-F085 Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101, PowerTrench®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds6000pF @ 25V
FET Feature-
Power Dissipation (Max)310W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263AB
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

NTD4959NHT4G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

9A (Ta), 58A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 11.5V

Rds On (Max) @ Id, Vgs

9mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

44nC @ 11.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2155pF @ 12V

FET Feature

-

Power Dissipation (Max)

1.3W (Ta), 52W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

DMG1012T-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

630mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

400mOhm @ 600mA, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

0.74nC @ 4.5V

Vgs (Max)

±6V

Input Capacitance (Ciss) (Max) @ Vds

60.67pF @ 16V

FET Feature

-

Power Dissipation (Max)

280mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-523

Package / Case

SOT-523

TK35E10K3(S1SS-Q)

Toshiba Semiconductor and Storage

Manufacturer

Toshiba Semiconductor and Storage

Series

-

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

BSS123ATA

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

170mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6Ohm @ 170mA, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

25pF @ 25V

FET Feature

-

Power Dissipation (Max)

360mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3

Package / Case

TO-236-3, SC-59, SOT-23-3

IRL60SL216

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®, StrongIRFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

195A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

1.95mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

255nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

15330pF @ 25V

FET Feature

-

Power Dissipation (Max)

375W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262-3

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Recently Sold

ACPL-C78A-000E

ACPL-C78A-000E

Broadcom

IC OPAMP ISOLATION 1 CIRC 8SSO

EN5339QI

EN5339QI

Intel

DC DC CONVERTER 0.6-4.6V 14W

CRA2512-FZ-R020ELF

CRA2512-FZ-R020ELF

Bourns

RES 0.02 OHM 1% 3W 2512

MC9S08DN16ACLC

MC9S08DN16ACLC

NXP

IC MCU 8BIT 16KB FLASH 32LQFP

XC6204B252MR-G

XC6204B252MR-G

Torex Semiconductor Ltd

IC REG LINEAR 2.5V 150MA SOT25

BZT52C22-7-F

BZT52C22-7-F

Diodes Incorporated

DIODE ZENER 22V 500MW SOD123

LTC1760IFW#PBF

LTC1760IFW#PBF

Linear Technology/Analog Devices

IC MANAGER BATTERY DUAL 48TSSOP

LT6350HMS8#PBF

LT6350HMS8#PBF

Linear Technology/Analog Devices

IC DIFF CONVERT/ADC DRIVER 8MSOP

CNY75B

CNY75B

Vishay Semiconductor Opto Division

OPTOISO 5KV TRANS W/BASE 6DIP

MAX809SEUR+T

MAX809SEUR+T

Maxim Integrated

IC MPU/RESET CIRC SOT23-3

LQH2MCN100K02L

LQH2MCN100K02L

Murata

FIXED IND 10UH 225MA 1.2 OHM SMD

SI2300DS-T1-GE3

SI2300DS-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 3.6A SOT-23