Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

AOB412L

AOB412L

For Reference Only

Part Number AOB412L
PNEDA Part # AOB412L
Description MOSFET N-CH 100V 8.2A TO263
Manufacturer Alpha & Omega Semiconductor
Unit Price Request a Quote
In Stock 7,380
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 17 - Apr 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

AOB412L Resources

Brand Alpha & Omega Semiconductor
ECAD Module ECAD
Mfr. Part NumberAOB412L
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • AOB412L Datasheet
  • where to find AOB412L
  • Alpha & Omega Semiconductor

  • Alpha & Omega Semiconductor AOB412L
  • AOB412L PDF Datasheet
  • AOB412L Stock

  • AOB412L Pinout
  • Datasheet AOB412L
  • AOB412L Supplier

  • Alpha & Omega Semiconductor Distributor
  • AOB412L Price
  • AOB412L Distributor

AOB412L Specifications

ManufacturerAlpha & Omega Semiconductor Inc.
SeriesSDMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C8.2A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Rds On (Max) @ Id, Vgs15.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs54nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds3220pF @ 50V
FET Feature-
Power Dissipation (Max)2.6W (Ta), 150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (D²Pak)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

The Products You May Be Interested In

2N6661JTVP02

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

90V

Current - Continuous Drain (Id) @ 25°C

860mA (Tc)

Drive Voltage (Max Rds On, Min Rds On)

5V, 10V

Rds On (Max) @ Id, Vgs

4Ohm @ 1A, 10V

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

50pF @ 25V

FET Feature

-

Power Dissipation (Max)

725mW (Ta), 6.25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-39

Package / Case

TO-205AD, TO-39-3 Metal Can

SQ1421EDH-T1_GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

1.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

290mOhm @ 2A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5.4nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

355pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.3W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-70-6 (SOT-363)

Package / Case

6-TSSOP, SC-88, SOT-363

CSD18534Q5AT

Texas Instruments

Manufacturer

Series

NexFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

50A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

9.8mOhm @ 14A, 10V

Vgs(th) (Max) @ Id

2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11.1nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1770pF @ 30V

FET Feature

-

Power Dissipation (Max)

3.1W (Ta), 77W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-VSONP (5x6)

Package / Case

8-PowerTDFN

BSS126H6906XTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

21mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

0V, 10V

Rds On (Max) @ Id, Vgs

500Ohm @ 16mA, 10V

Vgs(th) (Max) @ Id

1.6V @ 8µA

Gate Charge (Qg) (Max) @ Vgs

2.1nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

28pF @ 25V

FET Feature

Depletion Mode

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3

Package / Case

TO-236-3, SC-59, SOT-23-3

IRFS23N20DTRLP

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

24A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

100mOhm @ 14A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

86nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1960pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 170W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

SMCJ15A-13-F

SMCJ15A-13-F

Diodes Incorporated

TVS DIODE 15V 24.4V SMC

PIC18LF1320-I/P

PIC18LF1320-I/P

Microchip Technology

IC MCU 8BIT 8KB FLASH 18DIP

ADG3304BRUZ

ADG3304BRUZ

Analog Devices

IC TRNSLTR BIDIRECTIONAL 14TSSOP

SSM2305RMZ-R2

SSM2305RMZ-R2

Analog Devices

IC AMP AUDIO 2.8W MONO D 8MSOP

C5750X7S2A106K230KE

C5750X7S2A106K230KE

TDK

CAP CER 10UF 100V X7S 2220

PVG612ASPBF

PVG612ASPBF

Infineon Technologies

SSR RELAY SPST-NO 2A 0-60V

MUR160

MUR160

ON Semiconductor

DIODE GEN PURP 600V 1A AXIAL

CP2102-GM

CP2102-GM

Silicon Labs

IC USB-TO-UART BRIDGE 28VQFN

MAX8556ETE+T

MAX8556ETE+T

Maxim Integrated

IC REG LINEAR POS ADJ 4A 16TQFN

BSS84-7-F

BSS84-7-F

Diodes Incorporated

MOSFET P-CH 50V 130MA SOT23-3

V5.5MLA0603NH

V5.5MLA0603NH

Littelfuse

VARISTOR 8.2V 30A 0603

PTN3363BSMP

PTN3363BSMP

NXP

IC DVI/HDMI LVL SHIFTER 32HVQFN