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SIRA18DP-T1-RE3

SIRA18DP-T1-RE3

For Reference Only

Part Number SIRA18DP-T1-RE3
PNEDA Part # SIRA18DP-T1-RE3
Description MOSFET N-CH 30V 33A POWERPAKSO-8
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 6,552
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 28 - Dec 3 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SIRA18DP-T1-RE3 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSIRA18DP-T1-RE3
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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SIRA18DP-T1-RE3 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs7.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs21.5nC @ 10V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds1000pF @ 15V
FET Feature-
Power Dissipation (Max)14.7W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package / CasePowerPAK® SO-8

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