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GP2M023A050N

GP2M023A050N

For Reference Only

Part Number GP2M023A050N
PNEDA Part # GP2M023A050N
Description MOSFET N-CH 500V 23A TO3PN
Manufacturer Global Power Technologies Group
Unit Price Request a Quote
In Stock 3,852
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

GP2M023A050N Resources

Brand Global Power Technologies Group
ECAD Module ECAD
Mfr. Part NumberGP2M023A050N
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
GP2M023A050N, GP2M023A050N Datasheet (Total Pages: 5, Size: 569.64 KB)
PDFGP2M023A050N Datasheet Cover
GP2M023A050N Datasheet Page 2 GP2M023A050N Datasheet Page 3 GP2M023A050N Datasheet Page 4 GP2M023A050N Datasheet Page 5

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GP2M023A050N Specifications

ManufacturerGlobal Power Technologies Group
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs220mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs64nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3270pF @ 25V
FET Feature-
Power Dissipation (Max)347W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PN
Package / CaseTO-3P-3, SC-65-3

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