Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

PSMN016-100XS,127

PSMN016-100XS,127

For Reference Only

Part Number PSMN016-100XS,127
PNEDA Part # PSMN016-100XS-127
Description MOSFET N-CH 100V 32.1A TO-220F
Manufacturer NXP
Unit Price Request a Quote
In Stock 4,320
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 21 - Mar 26 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

PSMN016-100XS Resources

Brand NXP
ECAD Module ECAD
Mfr. Part NumberPSMN016-100XS,127
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • PSMN016-100XS,127 Datasheet
  • where to find PSMN016-100XS,127
  • NXP

  • NXP PSMN016-100XS,127
  • PSMN016-100XS,127 PDF Datasheet
  • PSMN016-100XS,127 Stock

  • PSMN016-100XS,127 Pinout
  • Datasheet PSMN016-100XS,127
  • PSMN016-100XS,127 Supplier

  • NXP Distributor
  • PSMN016-100XS,127 Price
  • PSMN016-100XS,127 Distributor

PSMN016-100XS Specifications

ManufacturerNXP USA Inc.
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C32.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs16mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs46.2nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2404pF @ 50V
FET Feature-
Power Dissipation (Max)46.1W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack, Isolated Tab

The Products You May Be Interested In

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

43.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

17mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

690pF @ 25V

FET Feature

-

Power Dissipation (Max)

57.6W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

STE88N65M5

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ V

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

88A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

29mOhm @ 42A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

204nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

8825pF @ 100V

FET Feature

-

Power Dissipation (Max)

494W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

ISOTOP

Package / Case

SOT-227-4

IRFH5025TR2PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

3.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

100mOhm @ 5.7A, 10V

Vgs(th) (Max) @ Id

5V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

56nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2150pF @ 50V

FET Feature

-

Power Dissipation (Max)

3.6W (Ta), 8.3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-PQFN (5x6)

Package / Case

8-PowerVDFN

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

34V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

3.8V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

82nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4533pF @ 25V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

IPA70R750P7SXKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ P7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

700V

Current - Continuous Drain (Id) @ 25°C

6.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

750mOhm @ 1.4A, 10V

Vgs(th) (Max) @ Id

3.5V @ 70µA

Gate Charge (Qg) (Max) @ Vgs

8.3nC @ 400V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

306pF @ 400V

FET Feature

-

Power Dissipation (Max)

21.2W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220 Full Pack

Package / Case

TO-220-3 Full Pack

Recently Sold

M29W800DT70N6E

M29W800DT70N6E

Micron Technology Inc.

IC FLASH 8M PARALLEL 48TSOP

843002AKI-40LFT

843002AKI-40LFT

IDT, Integrated Device Technology

IC SYNTHESIZER LVPECL 32-VFQFPN

MMIX4B22N300

MMIX4B22N300

IXYS

TRANS BIPOLAR 3000V 38A MOSFET

NANOSMDC035F-2

NANOSMDC035F-2

Littelfuse

PTC RESET FUSE 16V 350MA 1206

LE75181BBSC

LE75181BBSC

Microchip Technology

IC LINE CARD LCAS 1CH 16SOIC

NUC2401MNTAG

NUC2401MNTAG

ON Semiconductor

CMC 100MA 2LN 90 OHM SMD

IHLP2525CZER3R3M01

IHLP2525CZER3R3M01

Vishay Dale

FIXED IND 3.3UH 6A 30 MOHM SMD

VNQ600

VNQ600

STMicroelectronics

RELAY SSR 4-CH HI-SIDE 28-SOIC

AOZ8808DI-05

AOZ8808DI-05

Alpha & Omega Semiconductor

TVS DIODE 5V 9V 10DFN

HCPL-5631

HCPL-5631

Broadcom

OPTOISO 1.5KV 2CH OPEN COLL 8DIP

EPC2032

EPC2032

EPC

GANFET TRANS 100V 48A BUMPED DIE

MAX6818EAP

MAX6818EAP

Maxim Integrated

IC DEBOUNCER SWITCH OCTAL 20SSOP