2N7002H6327XTSA2
For Reference Only
| Part Number | 2N7002H6327XTSA2 |
| PNEDA Part # | 2N7002H6327XTSA2 |
| Description | MOSFET N-CH 60V 0.3A SOT23 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 169,362 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 18 - Mar 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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2N7002H6327XTSA2 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | 2N7002H6327XTSA2 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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Logistics Mode
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2N7002H6327XTSA2 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.6nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 20pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
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Manufacturer Rohm Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12V Current - Continuous Drain (Id) @ 25°C 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 62mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V Vgs (Max) -8V Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 6V FET Feature - Power Dissipation (Max) 320mW (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TUMT6 Package / Case 6-SMD, Flat Leads |
