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IRFH5025TR2PBF

IRFH5025TR2PBF

For Reference Only

Part Number IRFH5025TR2PBF
PNEDA Part # IRFH5025TR2PBF
Description MOSFET N-CH 250V 3.8A PQFN
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 2,430
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRFH5025TR2PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRFH5025TR2PBF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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IRFH5025TR2PBF Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs100mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs56nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2150pF @ 50V
FET Feature-
Power Dissipation (Max)3.6W (Ta), 8.3W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-PQFN (5x6)
Package / Case8-PowerVDFN

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