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PHK12NQ10T,518

PHK12NQ10T,518

For Reference Only

Part Number PHK12NQ10T,518
PNEDA Part # PHK12NQ10T-518
Description MOSFET N-CH 100V 11.6A SOT96-1
Manufacturer NXP
Unit Price Request a Quote
In Stock 6,300
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

PHK12NQ10T Resources

Brand NXP
ECAD Module ECAD
Mfr. Part NumberPHK12NQ10T,518
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
PHK12NQ10T, PHK12NQ10T Datasheet (Total Pages: 13, Size: 457.22 KB)
PDFPHK12NQ10T Datasheet Cover
PHK12NQ10T Datasheet Page 2 PHK12NQ10T Datasheet Page 3 PHK12NQ10T Datasheet Page 4 PHK12NQ10T Datasheet Page 5 PHK12NQ10T Datasheet Page 6 PHK12NQ10T Datasheet Page 7 PHK12NQ10T Datasheet Page 8 PHK12NQ10T Datasheet Page 9 PHK12NQ10T Datasheet Page 10 PHK12NQ10T Datasheet Page 11

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PHK12NQ10T Specifications

ManufacturerNXP USA Inc.
SeriesTrenchMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C11.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs28mOhm @ 6A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1965pF @ 25V
FET Feature-
Power Dissipation (Max)8.9W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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