PHK12NQ10T Datasheet
PHK12NQ10T Datasheet
Total Pages: 13
Size: 457.22 KB
NXP
This datasheet covers 1 part numbers:
PHK12NQ10T,518
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Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 11.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 28mOhm @ 6A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1965pF @ 25V FET Feature - Power Dissipation (Max) 8.9W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
