NVMYS1D2N04CLTWG
For Reference Only
| Part Number | NVMYS1D2N04CLTWG |
| PNEDA Part # | NVMYS1D2N04CLTWG |
| Description | T6 40V LL LFPAK |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 3,240 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Mar 18 - Mar 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
NVMYS1D2N04CLTWG Resources
| Brand | ON Semiconductor |
| ECAD Module |
|
| Mfr. Part Number | NVMYS1D2N04CLTWG |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- NVMYS1D2N04CLTWG Datasheet
- where to find NVMYS1D2N04CLTWG
- ON Semiconductor
- ON Semiconductor NVMYS1D2N04CLTWG
- NVMYS1D2N04CLTWG PDF Datasheet
- NVMYS1D2N04CLTWG Stock
- NVMYS1D2N04CLTWG Pinout
- Datasheet NVMYS1D2N04CLTWG
- NVMYS1D2N04CLTWG Supplier
- ON Semiconductor Distributor
- NVMYS1D2N04CLTWG Price
- NVMYS1D2N04CLTWG Distributor
NVMYS1D2N04CLTWG Specifications
| Manufacturer | ON Semiconductor |
| Series | Automotive, AEC-Q101 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 44A (Ta), 258A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.2mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 180µA |
| Gate Charge (Qg) (Max) @ Vgs | 109nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6330pF @ 20V |
| FET Feature | - |
| Power Dissipation (Max) | 3.9W (Ta), 134W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | LFPAK4 (5x6) |
| Package / Case | SOT-1023, 4-LFPAK |
The Products You May Be Interested In
|
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 32A (Ta), 160A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.3mOhm @ 33A, 10V Vgs(th) (Max) @ Id 2.1V @ 100µA Gate Charge (Qg) (Max) @ Vgs 39nC @ 4.5V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 4160pF @ 13V FET Feature Schottky Diode (Body) Power Dissipation (Max) 2.1W (Ta), 54W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DIRECTFET™ MX Package / Case DirectFET™ Isometric MX |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 195A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2mOhm @ 75A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6450pF @ 25V FET Feature - Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Central Semiconductor Corp Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4V Rds On (Max) @ Id, Vgs 100mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 2.4nC @ 4.5V Vgs (Max) 8V Input Capacitance (Ciss) (Max) @ Vds 220pF @ 10V FET Feature - Power Dissipation (Max) 150mW (Ta) Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-563 Package / Case SOT-563, SOT-666 |
Manufacturer Nexperia USA Inc. Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 4.1A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 55mOhm @ 2.4A, 4.5V Vgs(th) (Max) @ Id 1.25V @ 250µA Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 10V FET Feature - Power Dissipation (Max) 530mW (Ta), 6.25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSOP Package / Case SC-74, SOT-457 |
Manufacturer Alpha & Omega Semiconductor Inc. Series AlphaSGT™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 48A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 7.9mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3130pF @ 50V FET Feature - Power Dissipation (Max) 108W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-DFN-EP (5x6) Package / Case 8-PowerSMD, Flat Leads |
