Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

CMLDM7120G TR

CMLDM7120G TR

For Reference Only

Part Number CMLDM7120G TR
PNEDA Part # CMLDM7120G-TR
Description MOSFET N-CH 20V 1A SOT563
Manufacturer Central Semiconductor Corp
Unit Price Request a Quote
In Stock 3,402
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

CMLDM7120G TR Resources

Brand Central Semiconductor Corp
ECAD Module ECAD
Mfr. Part NumberCMLDM7120G TR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • CMLDM7120G TR Datasheet
  • where to find CMLDM7120G TR
  • Central Semiconductor Corp

  • Central Semiconductor Corp CMLDM7120G TR
  • CMLDM7120G TR PDF Datasheet
  • CMLDM7120G TR Stock

  • CMLDM7120G TR Pinout
  • Datasheet CMLDM7120G TR
  • CMLDM7120G TR Supplier

  • Central Semiconductor Corp Distributor
  • CMLDM7120G TR Price
  • CMLDM7120G TR Distributor

CMLDM7120G TR Specifications

ManufacturerCentral Semiconductor Corp
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4V
Rds On (Max) @ Id, Vgs100mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs2.4nC @ 4.5V
Vgs (Max)8V
Input Capacitance (Ciss) (Max) @ Vds220pF @ 10V
FET Feature-
Power Dissipation (Max)150mW (Ta)
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-563
Package / CaseSOT-563, SOT-666

The Products You May Be Interested In

IXTH75N15

IXYS

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150V

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

23mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

210nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5400pF @ 25V

FET Feature

-

Power Dissipation (Max)

330W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXTH)

Package / Case

TO-247-3

AOB11C60L

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

400mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

42nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2000pF @ 100V

FET Feature

-

Power Dissipation (Max)

278W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (D²Pak)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRFBE30LPBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

4.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3Ohm @ 2.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

78nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 25V

FET Feature

-

Power Dissipation (Max)

125W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

I2PAK

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

IRL540NSPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

36A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

44mOhm @ 18A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

74nC @ 5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

1800pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 140W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

CSD18511Q5A

Texas Instruments

Manufacturer

Series

NexFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

159A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.5mOhm @ 24A, 4.5V

Vgs(th) (Max) @ Id

2.45V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

63nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5850pF @ 10V

FET Feature

-

Power Dissipation (Max)

104W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-VSONP (5x6)

Package / Case

8-PowerTDFN

Recently Sold

BAT54-7-F

BAT54-7-F

Diodes Incorporated

DIODE SCHOTTKY 30V 200MA SOT23-3

MAX16808AUI+

MAX16808AUI+

Maxim Integrated

IC LED DRVR WT/RGB BCKLT 28TSSOP

MBR4045PT

MBR4045PT

Diodes Incorporated

DIODE ARRAY SCHOTTKY 45V TO3P

302R29W102KV4E

302R29W102KV4E

Johanson Dielectrics

CAP CER 1000PF 3KV X7R 1808

PIC18F6520-I/PT

PIC18F6520-I/PT

Microchip Technology

IC MCU 8BIT 32KB FLASH 64TQFP

ERJ-M1WSF20MU

ERJ-M1WSF20MU

Panasonic Electronic Components

RES 0.02 OHM 1% 1W 2512

ESD5V0D3-TP

ESD5V0D3-TP

Micro Commercial Co

TVS DIODE 5V 15.5V SOD323

IXGA20N120A3

IXGA20N120A3

IXYS

IGBT 1200V 40A 180W TO263

S25FL208K0RMFI041

S25FL208K0RMFI041

Cypress Semiconductor

IC FLASH 8M SPI 76MHZ 8SOIC

ES2D

ES2D

ON Semiconductor

DIODE GEN PURP 200V 2A DO214AA

D5V0L4B5SO-7

D5V0L4B5SO-7

Diodes Incorporated

TVS DIODE 5V 14V SOT353

STM32H743VIT6

STM32H743VIT6

STMicroelectronics

IC MCU 32BIT 2MB FLASH 100LQFP