NVMYS1D2N04CLTWG Datasheet
NVMYS1D2N04CLTWG Datasheet
Total Pages: 6
Size: 198.28 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
NVMYS1D2N04CLTWG
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Manufacturer ON Semiconductor Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 44A (Ta), 258A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.2mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2V @ 180µA Gate Charge (Qg) (Max) @ Vgs 109nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6330pF @ 20V FET Feature - Power Dissipation (Max) 3.9W (Ta), 134W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package LFPAK4 (5x6) Package / Case SOT-1023, 4-LFPAK |
