NVMFD6H852NLWFT1G Datasheet
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Manufacturer ON Semiconductor Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 7A (Ta), 25A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 25.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2V @ 26µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 521pF @ 40V FET Feature - Power Dissipation (Max) 3.2W (Ta), 38W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-DFN (5x6) Dual Flag (SO8FL-Dual) Package / Case 8-PowerTDFN |
Manufacturer ON Semiconductor Series Automotive, AEC-Q101 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 7A (Ta), 25A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 25.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id 2V @ 26µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 521pF @ 40V FET Feature - Power Dissipation (Max) 3.2W (Ta), 38W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-DFN (5x6) Dual Flag (SO8FL-Dual) Package / Case 8-PowerTDFN |
