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NTP8G202NG

NTP8G202NG

For Reference Only

Part Number NTP8G202NG
PNEDA Part # NTP8G202NG
Description MOSFET N-CH 600V 9A TO220
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,608
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

NTP8G202NG Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberNTP8G202NG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
NTP8G202NG, NTP8G202NG Datasheet (Total Pages: 6, Size: 108.64 KB)
PDFNTP8G202NG Datasheet Cover
NTP8G202NG Datasheet Page 2 NTP8G202NG Datasheet Page 3 NTP8G202NG Datasheet Page 4 NTP8G202NG Datasheet Page 5 NTP8G202NG Datasheet Page 6

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NTP8G202NG Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)8V
Rds On (Max) @ Id, Vgs350mOhm @ 5.5A, 8V
Vgs(th) (Max) @ Id2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs9.3nC @ 4.5V
Vgs (Max)±18V
Input Capacitance (Ciss) (Max) @ Vds760pF @ 400V
FET Feature-
Power Dissipation (Max)65W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

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