NTP8G202NG Datasheet
NTP8G202NG Datasheet
Total Pages: 6
Size: 108.64 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
NTP8G202NG
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 8V Rds On (Max) @ Id, Vgs 350mOhm @ 5.5A, 8V Vgs(th) (Max) @ Id 2.6V @ 500µA Gate Charge (Qg) (Max) @ Vgs 9.3nC @ 4.5V Vgs (Max) ±18V Input Capacitance (Ciss) (Max) @ Vds 760pF @ 400V FET Feature - Power Dissipation (Max) 65W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |
