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IRGS4B60KD1PBF

IRGS4B60KD1PBF

For Reference Only

Part Number IRGS4B60KD1PBF
PNEDA Part # IRGS4B60KD1PBF
Description IGBT 600V 11A 63W D2PAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,958
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRGS4B60KD1PBF Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRGS4B60KD1PBF
CategorySemiconductorsTransistorsTransistors - IGBTs - Single

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IRGS4B60KD1PBF Specifications

ManufacturerInfineon Technologies
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)11A
Current - Collector Pulsed (Icm)22A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 4A
Power - Max63W
Switching Energy73µJ (on), 47µJ (off)
Input TypeStandard
Gate Charge12nC
Td (on/off) @ 25°C22ns/100ns
Test Condition400V, 4A, 100Ohm, 15V
Reverse Recovery Time (trr)93ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD2PAK

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Current - Collector (Ic) (Max)

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Reverse Recovery Time (trr)

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