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IXGH50N60B2

IXGH50N60B2

For Reference Only

Part Number IXGH50N60B2
PNEDA Part # IXGH50N60B2
Description IGBT 600V 75A 400W TO247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,848
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 17 - Nov 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXGH50N60B2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXGH50N60B2
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXGH50N60B2, IXGH50N60B2 Datasheet (Total Pages: 5, Size: 585.66 KB)
PDFIXGT50N60B2 Datasheet Cover
IXGT50N60B2 Datasheet Page 2 IXGT50N60B2 Datasheet Page 3 IXGT50N60B2 Datasheet Page 4 IXGT50N60B2 Datasheet Page 5

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IXGH50N60B2 Specifications

ManufacturerIXYS
SeriesHiPerFAST™
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)75A
Current - Collector Pulsed (Icm)200A
Vce(on) (Max) @ Vge, Ic2V @ 15V, 40A
Power - Max400W
Switching Energy550µJ (off)
Input TypeStandard
Gate Charge140nC
Td (on/off) @ 25°C18ns/190ns
Test Condition480V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247AD (IXGH)

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 30A

Power - Max

300W

Switching Energy

200µJ (off)

Input Type

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Gate Charge

95nC

Td (on/off) @ 25°C

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Test Condition

400V, 30A, 3Ohm, 15V

Reverse Recovery Time (trr)

25ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

160A

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 40A

Power - Max

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Switching Energy

1mJ (on), 520µJ (off)

Input Type

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120nC

Td (on/off) @ 25°C

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Test Condition

400V, 40A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

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Infineon Technologies

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Td (on/off) @ 25°C

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Test Condition

800V, 5A, 50Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

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ON Semiconductor

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Input Type

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Gate Charge

21nC

Td (on/off) @ 25°C

0.9µs/4.8µs

Test Condition

300V, 6.5A, 1000Ohm, 5V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

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IRG8P25N120KDPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

180W

Switching Energy

800µJ (on), 900µJ (off)

Input Type

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Gate Charge

135nC

Td (on/off) @ 25°C

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Test Condition

600V, 15A, 10Ohm, 15V

Reverse Recovery Time (trr)

70ns

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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