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NGTB30N65IHL2WG Datasheet

NGTB30N65IHL2WG Datasheet
Total Pages: 7
Size: 91.45 KB
ON Semiconductor
This datasheet covers 1 part numbers: NGTB30N65IHL2WG
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NGTB30N65IHL2WG

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 30A

Power - Max

300W

Switching Energy

200µJ (off)

Input Type

Standard

Gate Charge

135nC

Td (on/off) @ 25°C

-/145ns

Test Condition

400V, 30A, 10Ohm, 15V

Reverse Recovery Time (trr)

430ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3