NGTB30N65IHL2WG Datasheet
NGTB30N65IHL2WG Datasheet
Total Pages: 7
Size: 91.45 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
NGTB30N65IHL2WG
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Manufacturer ON Semiconductor Series - IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 60A Current - Collector Pulsed (Icm) 120A Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 30A Power - Max 300W Switching Energy 200µJ (off) Input Type Standard Gate Charge 135nC Td (on/off) @ 25°C -/145ns Test Condition 400V, 30A, 10Ohm, 15V Reverse Recovery Time (trr) 430ns Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247-3 |
