NGTB30N135IHR1WG Datasheet
NGTB30N135IHR1WG Datasheet
Total Pages: 9
Size: 131.44 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
NGTB30N135IHR1WG
|
Manufacturer ON Semiconductor Series - IGBT Type Trench Field Stop Voltage - Collector Emitter Breakdown (Max) 1350V Current - Collector (Ic) (Max) 60A Current - Collector Pulsed (Icm) 120A Vce(on) (Max) @ Vge, Ic 3V @ 15V, 30A Power - Max 394W Switching Energy 630µA (off) Input Type Standard Gate Charge 220nC Td (on/off) @ 25°C -/200ns Test Condition 600V, 30A, 10Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -40°C ~ 175°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247-3 |
