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IXYP10N65C3D1

IXYP10N65C3D1

For Reference Only

Part Number IXYP10N65C3D1
PNEDA Part # IXYP10N65C3D1
Description IGBT 650V 30A 160W TO-220
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,416
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXYP10N65C3D1 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXYP10N65C3D1
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXYP10N65C3D1, IXYP10N65C3D1 Datasheet (Total Pages: 7, Size: 209.08 KB)
PDFIXYP10N65C3D1 Datasheet Cover
IXYP10N65C3D1 Datasheet Page 2 IXYP10N65C3D1 Datasheet Page 3 IXYP10N65C3D1 Datasheet Page 4 IXYP10N65C3D1 Datasheet Page 5 IXYP10N65C3D1 Datasheet Page 6 IXYP10N65C3D1 Datasheet Page 7

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IXYP10N65C3D1 Specifications

ManufacturerIXYS
SeriesGenX3™, XPT™
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)650V
Current - Collector (Ic) (Max)30A
Current - Collector Pulsed (Icm)54A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 10A
Power - Max160W
Switching Energy240µJ (on), 110µJ (off)
Input TypeStandard
Gate Charge18nC
Td (on/off) @ 25°C20ns/77ns
Test Condition400V, 10A, 50Ohm, 15V
Reverse Recovery Time (trr)170ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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Operating Temperature

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Mounting Type

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Package / Case

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Supplier Device Package

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

960V, 50A, 5Ohm, 15V

Reverse Recovery Time (trr)

1.7µs

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Infineon Technologies

Manufacturer

Infineon Technologies

Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

28A

Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

67nC

Td (on/off) @ 25°C

26ns/130ns

Test Condition

480V, 16A, 23Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AC

FGH40T65SHDF-F155

ON Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

650V

Current - Collector (Ic) (Max)

80A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

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Power - Max

268W

Switching Energy

1.22mJ (on), 440µJ (off)

Input Type

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Gate Charge

68nC

Td (on/off) @ 25°C

18ns/64ns

Test Condition

400V, 40A, 6Ohm, 15V

Reverse Recovery Time (trr)

101ns

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

STGP3HF60HD

STMicroelectronics

Manufacturer

STMicroelectronics

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

7.5A

Current - Collector Pulsed (Icm)

18A

Vce(on) (Max) @ Vge, Ic

2.95V @ 15V, 1.5A

Power - Max

38W

Switching Energy

19µJ (on), 12µJ (off)

Input Type

Standard

Gate Charge

12nC

Td (on/off) @ 25°C

11ns/60ns

Test Condition

400V, 1.5A, 100Ohm, 15V

Reverse Recovery Time (trr)

85ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220

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