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IXBX50N360HV

IXBX50N360HV

For Reference Only

Part Number IXBX50N360HV
PNEDA Part # IXBX50N360HV
Description IGBT 3600V 125A 660W TO-247PLUS
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,156
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 3 - Apr 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXBX50N360HV Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXBX50N360HV
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXBX50N360HV, IXBX50N360HV Datasheet (Total Pages: 6, Size: 235.98 KB)
PDFIXBX50N360HV Datasheet Cover
IXBX50N360HV Datasheet Page 2 IXBX50N360HV Datasheet Page 3 IXBX50N360HV Datasheet Page 4 IXBX50N360HV Datasheet Page 5 IXBX50N360HV Datasheet Page 6

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IXBX50N360HV Specifications

ManufacturerIXYS
SeriesBIMOSFET™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)3600V
Current - Collector (Ic) (Max)125A
Current - Collector Pulsed (Icm)420A
Vce(on) (Max) @ Vge, Ic2.9V @ 15V, 50A
Power - Max660W
Switching Energy-
Input TypeStandard
Gate Charge210nC
Td (on/off) @ 25°C46ns/205ns
Test Condition960V, 50A, 5Ohm, 15V
Reverse Recovery Time (trr)1.7µs
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3 Variant
Supplier Device PackageTO-247PLUS-HV

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Vce(on) (Max) @ Vge, Ic

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Td (on/off) @ 25°C

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ON Semiconductor

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

30A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Td (on/off) @ 25°C

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Test Condition

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Reverse Recovery Time (trr)

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