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IXBX50N360HV

IXBX50N360HV

For Reference Only

Part Number IXBX50N360HV
PNEDA Part # IXBX50N360HV
Description IGBT 3600V 125A 660W TO-247PLUS
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,156
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXBX50N360HV Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXBX50N360HV
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
IXBX50N360HV, IXBX50N360HV Datasheet (Total Pages: 6, Size: 235.98 KB)
PDFIXBX50N360HV Datasheet Cover
IXBX50N360HV Datasheet Page 2 IXBX50N360HV Datasheet Page 3 IXBX50N360HV Datasheet Page 4 IXBX50N360HV Datasheet Page 5 IXBX50N360HV Datasheet Page 6

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IXBX50N360HV Specifications

ManufacturerIXYS
SeriesBIMOSFET™
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)3600V
Current - Collector (Ic) (Max)125A
Current - Collector Pulsed (Icm)420A
Vce(on) (Max) @ Vge, Ic2.9V @ 15V, 50A
Power - Max660W
Switching Energy-
Input TypeStandard
Gate Charge210nC
Td (on/off) @ 25°C46ns/205ns
Test Condition960V, 50A, 5Ohm, 15V
Reverse Recovery Time (trr)1.7µs
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-247-3 Variant
Supplier Device PackageTO-247PLUS-HV

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 30A

Power - Max

300W

Switching Energy

200µJ (off)

Input Type

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Gate Charge

95nC

Td (on/off) @ 25°C

18ns/90ns

Test Condition

400V, 30A, 3Ohm, 15V

Reverse Recovery Time (trr)

25ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

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Supplier Device Package

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 15A

Power - Max

117W

Switching Energy

550µJ (on), 350µJ (off)

Input Type

Standard

Gate Charge

88nC

Td (on/off) @ 25°C

65ns/170ns

Test Condition

400V, 15A, 22Ohm, 15V

Reverse Recovery Time (trr)

270ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220

Manufacturer

IXYS

Series

-

IGBT Type

PT

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

35A

Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 16A

Power - Max

190W

Switching Energy

380µJ (off)

Input Type

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Gate Charge

33nC

Td (on/off) @ 25°C

30ns/116ns

Test Condition

480V, 16A, 10Ohm, 15V

Reverse Recovery Time (trr)

30ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247AD (IXSH)

GPA020A135MN-FD

Global Power Technologies Group

Manufacturer

Global Power Technologies Group

Series

-

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

1350V

Current - Collector (Ic) (Max)

40A

Current - Collector Pulsed (Icm)

60A

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 20A

Power - Max

223W

Switching Energy

2.5mJ (on), 760µJ (off)

Input Type

Standard

Gate Charge

180nC

Td (on/off) @ 25°C

25ns/175ns

Test Condition

600V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

425ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3

Supplier Device Package

TO-3P

Manufacturer

IXYS

Series

GenX3™, XPT™

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

900V

Current - Collector (Ic) (Max)

310A

Current - Collector Pulsed (Icm)

840A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 140A

Power - Max

1630W

Switching Energy

4.3mJ (on), 4mJ (off)

Input Type

Standard

Gate Charge

330nC

Td (on/off) @ 25°C

40ns/145ns

Test Condition

450V, 100A, 1Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

TO-264 (IXYK)

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