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IXTK110N30

IXTK110N30

For Reference Only

Part Number IXTK110N30
PNEDA Part # IXTK110N30
Description MOSFET N-CH 300V 110A TO-264
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,156
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Nov 17 - Nov 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTK110N30 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTK110N30
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTK110N30, IXTK110N30 Datasheet (Total Pages: 4, Size: 118.52 KB)
PDFIXTK110N30 Datasheet Cover
IXTK110N30 Datasheet Page 2 IXTK110N30 Datasheet Page 3 IXTK110N30 Datasheet Page 4

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IXTK110N30 Specifications

ManufacturerIXYS
SeriesMegaMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs26mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs390nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7800pF @ 25V
FET Feature-
Power Dissipation (Max)730W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-264 (IXTK)
Package / CaseTO-264-3, TO-264AA

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