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IXTK110N30 Datasheet

IXTK110N30 Datasheet
Total Pages: 4
Size: 118.52 KB
IXYS
This datasheet covers 1 part numbers: IXTK110N30
IXTK110N30 Datasheet Page 1
IXTK110N30 Datasheet Page 2
IXTK110N30 Datasheet Page 3
IXTK110N30 Datasheet Page 4
IXTK110N30

IXYS

Manufacturer

IXYS

Series

MegaMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

110A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

26mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

390nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7800pF @ 25V

FET Feature

-

Power Dissipation (Max)

730W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-264 (IXTK)

Package / Case

TO-264-3, TO-264AA