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IXTH1N200P3HV

IXTH1N200P3HV

For Reference Only

Part Number IXTH1N200P3HV
PNEDA Part # IXTH1N200P3HV
Description MOSFET N-CH 2000V 1A TO-247HV
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,802
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 17 - Mar 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTH1N200P3HV Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTH1N200P3HV
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTH1N200P3HV, IXTH1N200P3HV Datasheet (Total Pages: 5, Size: 262.47 KB)
PDFIXTA1N200P3HV Datasheet Cover
IXTA1N200P3HV Datasheet Page 2 IXTA1N200P3HV Datasheet Page 3 IXTA1N200P3HV Datasheet Page 4 IXTA1N200P3HV Datasheet Page 5

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IXTH1N200P3HV Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)2000V
Current - Continuous Drain (Id) @ 25°C1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs40Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs23.5nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds646pF @ 25V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247HV
Package / CaseTO-247-3 Variant

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