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IXFH66N20Q

IXFH66N20Q

For Reference Only

Part Number IXFH66N20Q
PNEDA Part # IXFH66N20Q
Description MOSFET N-CH 200V 66A TO-247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,508
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 16 - Mar 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFH66N20Q Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFH66N20Q
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFH66N20Q, IXFH66N20Q Datasheet (Total Pages: 4, Size: 157.19 KB)
PDFIXFH66N20Q Datasheet Cover
IXFH66N20Q Datasheet Page 2 IXFH66N20Q Datasheet Page 3 IXFH66N20Q Datasheet Page 4

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IXFH66N20Q Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C66A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs40mOhm @ 33A, 10V
Vgs(th) (Max) @ Id4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs105nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3700pF @ 25V
FET Feature-
Power Dissipation (Max)400W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AD (IXFH)
Package / CaseTO-247-3

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