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BSZ16DN25NS3GATMA1

BSZ16DN25NS3GATMA1

For Reference Only

Part Number BSZ16DN25NS3GATMA1
PNEDA Part # BSZ16DN25NS3GATMA1
Description MOSFET N-CH 250V 10.9A 8TSDSON
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 44,184
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 17 - Apr 22 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

BSZ16DN25NS3GATMA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberBSZ16DN25NS3GATMA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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BSZ16DN25NS3GATMA1 Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25°C10.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs165mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id4V @ 32µA
Gate Charge (Qg) (Max) @ Vgs11.4nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds920pF @ 100V
FET Feature-
Power Dissipation (Max)62.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TSDSON-8
Package / Case8-PowerTDFN

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